Experimental computer memories and processors built from magnetic materials use far less energy than traditional silicon-based devices. Two-dimensional magnetic materials, composed of layers that are only a few atoms thick, have incredible properties that could allow magnetic-based devices to achieve unprecedented speed, efficiency, and scalability.

While many hurdles must be overcome until these so-called van der Waals magnetic materials can be integrated into functioning computers, MIT researchers took an important step in this direction by demonstrating precise control of a van der Waals magnet at room temperature.

This is key, since magnets composed of atomically thin van der Waals materials can typically only be controlled at extremely cold temperatures, making them difficult to deploy outside a laboratory.

The researchers used pulses of electrical current to switch the direction of the device’s magnetization at room temperature. Magnetic switching can be used in computation, the same way a transistor switches between open and closed to represent 0s and 1s in binary code, or in computer memory, where switching enables data storage.

The team fired bursts of electrons at a magnet made of a new material that can sustain its magnetism at higher temperatures. The experiment leveraged a fundamental property of electrons known as spin, which makes the electrons behave like tiny magnets. By manipulating the spin of electrons that strike the device, the researchers can switch its magnetization.

Our device is also more energy efficient than other van der Waals magnets that are unable to switch at room temperature.

“The heterostructure device we have developed requires an order of magnitude lower electrical current to switch the van der Waals magnet, compared to that required for bulk magnetic devices,” says Deblina Sarkar, the AT&T Career Development Assistant Professor in the MIT Media Lab and Center for Neurobiological Engineering, head of the Nano-Cybernetic Biotrek Lab, and the senior author of a paper on this technique. “Our device is also more energy efficient than other van der Waals magnets that are unable to switch at room temperature.”

In the future, such a magnet could be used to build faster computers that consume less electricity. It could also enable magnetic computer memories that are nonvolatile, which means they don’t leak information when powered off, or processors that make complex AI algorithms more energy-efficient.

“There is a lot of inertia around trying to improve materials that worked well in the past. But we have shown that if you make radical changes, starting by rethinking the materials you are using, you can potentially get much better solutions,” says Shivam Kajale, a graduate student in Sarkar’s lab and co-lead author of the paper.

An atomically thin advantage

Methods to fabricate tiny computer chips in a clean room from bulk materials like silicon can hamper devices. For instance, the layers of material may be barely 1 nanometer thick, so minuscule rough spots on the surface can be severe enough to degrade performance.

By contrast, van der Waals magnetic materials are intrinsically layered and structured in such a way that the surface remains perfectly smooth, even as researchers peel off layers to make thinner devices. In addition, atoms in one layer won’t leak into other layers, enabling the materials to retain their unique properties when stacked in devices.

“In terms of scaling and making these magnetic devices competitive for commercial applications, van der Waals materials are the way to go,” Kajale says.

But there’s a catch. This new class of magnetic materials have typically only been operated at temperatures below 60 kelvins (-351 degrees Fahrenheit). To build a magnetic computer processor or memory, researchers need to use electrical current to operate the magnet at room temperature.

To achieve this, the team focused on an emerging material called iron gallium telluride. This atomically thin material has all the properties needed for effective room temperature magnetism and doesn’t contain rare earth elements, which are undesirable because extracting them is especially destructive to the environment.

Nguyen carefully grew bulk crystals of this 2D material using a special technique. Then, Kajale fabricated a two-layer magnetic device using nanoscale flakes of iron gallium telluride underneath a six-nanometer layer of platinum.

Tiny device in hand, they used an intrinsic property of electrons known as spin to switch its magnetization at room temperature.

This work was carried out, in part, using the facilities at MIT.Nano and the Harvard University Center for Nanoscale Systems.

According to MIT News