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Toshiba adds 6, 8 and 10A devices to Silicon Carbide Schottky Barrier Diode Range

07/11/2013

Toshiba America Electronic Components, Inc., (Irvine, CA, U.S.) on October 24th, 2013, announced that it has extended its family of 650V silicon carbide (SiC) Schottky Barrier Diodes (SBD).

ec5de0c56_images.jpgToshiba America Electronic Components, Inc., (Irvine, CA, U.S.) on October 24th, 2013, announced that it has extended its family of 650V silicon carbide (SiC) Schottky Barrier Diodes (SBD).

Low forward voltage drop and a very fast switching action make SBDs well-suited to applications including power conditioners for photovoltaic (PV) power generation systems, solar inverters, uninterruptible power supplies and DC-DC converters.
 
SBDs can act as replacements for silicon diodes

SBDs meet diverse industry needs for smaller communications devices and suit solar PV applications, industrial applications ranging from servers to inverters and trains to automotive systems.

Toshiba affirms they can also act as replacements for silicon diodes in switching power supplies, where they are much more efficient.
 
Toshiba expands SBD line-up to meet spike in demand

The TRS6E65C, TRS8E65C and TRS10E65C are 6, 8, and 10A devices, respectively. These SBDs join Toshiba's 12A device, the TRS12E65C, which entered volume production in the second quarter of 2013.

According to the company, SiC power devices reduce heat dissipation during operation. The SBD range features a maximum reverse recovery current of 90 microamperes at 650V.


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